KSB985-R Bipolar Transistor

Characteristics of KSB985-R Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 150 V
  • Emitter-Base Voltage, max: 8 V
  • Collector Current − Continuous, max: 1.5 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 2000 to 5000
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126
  • Electrically Similar to the Popular 2SD985-M transistor

Pinout of KSB985-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSB985-R transistor can have a current gain of 2000 to 5000. The gain of the KSB985 will be in the range from 2000 to 30000, for the KSB985-O it will be in the range from 4000 to 10000, for the KSB985-Y it will be in the range from 8000 to 30000.

Complementary PNP transistor

The complementary PNP transistor to the KSB985-R is the KSB794-R.

Replacement and Equivalent for KSB985-R transistor

You can replace the KSB985-R with the 2N6038, 2N6038G, 2N6039, 2N6039G, 2SD1509, 2SD1692, 2SD1692-M, 2SD985, 2SD985-M, 2SD986, 2SD986-M, BD167, BD169, BD189, BD235, BD235G, BD237, BD237G, BD677, BD677A, BD677AG, BD677G, BD679, BD679A, BD679AG, BD679G, BD681, BD681G, BD777, BD779, KSB986, KSB986-R, KSD1692, KSD1692-O, KSE800, KSE801, KSE802, KSE803, MJE225, MJE242, MJE244, MJE270, MJE270G, MJE721, MJE722, MJE800, MJE800G, MJE801, MJE801G, MJE802, MJE802G, MJE803 or MJE803G.
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