BD677A Bipolar Transistor

Characteristics of BD677A Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126
  • Electrically Similar to the Popular MJE801 transistor

Pinout of BD677A

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

BD677A equivalent circuit

Complementary PNP transistor

The complementary PNP transistor to the BD677A is the BD678A.

Replacement and Equivalent for BD677A transistor

You can replace the BD677A with the 2N6038, 2N6038G, 2N6039, 2N6039G, BD677, BD677AG, BD677G, BD679, BD679A, BD679AG, BD679G, BD681, BD681G, BD777, BD779, KSE800, KSE801, KSE802, KSE803, MJE800, MJE800G, MJE801, MJE801G, MJE802, MJE802G, MJE803 or MJE803G.

Lead-free Version

The BD677AG transistor is the lead-free version of the BD677A.
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