BD679G Bipolar Transistor

Characteristics of BD679G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126
  • The BD679G is the lead-free version of the BD679 transistor

Pinout of BD679G

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BD679G is the BD680G.

Replacement and Equivalent for BD679G transistor

You can replace the BD679G with the 2N6039, 2N6039G, BD679, BD679A, BD679AG, BD681, BD681G, BD779, KSE802, KSE803, MJE802, MJE802G, MJE803 or MJE803G.
If you find an error please send an email to mail@el-component.com