BD677 Bipolar Transistor

Characteristics of BD677 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126
  • Electrically Similar to the Popular MJE800 transistor

Pinout of BD677

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

BD677 equivalent circuit

Complementary PNP transistor

The complementary PNP transistor to the BD677 is the BD678.

Replacement and Equivalent for BD677 transistor

You can replace the BD677 with the 2N6038, 2N6038G, 2N6039, 2N6039G, BD677A, BD677AG, BD677G, BD679, BD679A, BD679AG, BD679G, BD681, BD681G, BD777, BD779, KSE800, KSE801, KSE802, KSE803, MJE800, MJE800G, MJE801, MJE801G, MJE802, MJE802G, MJE803 or MJE803G.

Lead-free Version

The BD677G transistor is the lead-free version of the BD677.
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