2N6039G Bipolar Transistor
Characteristics of 2N6039G Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 80 V
- Collector-Base Voltage, max: 80 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 4 A
- Collector Dissipation: 40 W
- DC Current Gain (hfe): 750 to 15000
- Transition Frequency, min: 25 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-126
- The 2N6039G is the lead-free version of the 2N6039 transistor
Pinout of 2N6039G
Complementary PNP transistor
Replacement and Equivalent for 2N6039G transistor
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