2N6039G Bipolar Transistor

Characteristics of 2N6039G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 750 to 15000
  • Transition Frequency, min: 25 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126
  • The 2N6039G is the lead-free version of the 2N6039 transistor

Pinout of 2N6039G

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the 2N6039G is the 2N6036G.

Replacement and Equivalent for 2N6039G transistor

You can replace the 2N6039G with the 2N6039, BD679, BD679A, BD679AG, BD679G, BD681, BD681G, BD779, KSE802, KSE803, MJE242, MJE244, MJE802, MJE802G, MJE803 or MJE803G.
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