BD679AG Bipolar Transistor

Characteristics of BD679AG Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126
  • The BD679AG is the lead-free version of the BD679A transistor

Pinout of BD679AG

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BD679AG is the BD680AG.

Replacement and Equivalent for BD679AG transistor

You can replace the BD679AG with the 2N6039, 2N6039G, BD679, BD679A, BD679G, BD681, BD681G, BD779, KSE802, KSE803, MJE802, MJE802G, MJE803 or MJE803G.
If you find an error please send an email to mail@el-component.com