KSE801 Bipolar Transistor

Characteristics of KSE801 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126
  • Electrically Similar to the Popular MJE801 transistor

Pinout of KSE801

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the KSE801 is the KSE701.

Replacement and Equivalent for KSE801 transistor

You can replace the KSE801 with the 2N6038, 2N6038G, 2N6039, 2N6039G, BD677, BD677A, BD677AG, BD677G, BD679, BD679A, BD679AG, BD679G, BD681, BD681G, BD777, BD779, KSE800, KSE802, KSE803, MJE800, MJE800G, MJE801, MJE801G, MJE802, MJE802G, MJE803 or MJE803G.
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