KSE801 Bipolar Transistor
Characteristics of KSE801 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 60 V
- Collector-Base Voltage, max: 60 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 4 A
- Collector Dissipation: 40 W
- DC Current Gain (hfe): 750
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-126
- Electrically Similar to the Popular MJE801 transistor
Pinout of KSE801
Complementary PNP transistor
Replacement and Equivalent for KSE801 transistor
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