BD679A Bipolar Transistor

Characteristics of BD679A Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126
  • Electrically Similar to the Popular MJE803 transistor

Pinout of BD679A

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

BD679A equivalent circuit

Complementary PNP transistor

The complementary PNP transistor to the BD679A is the BD680A.

Replacement and Equivalent for BD679A transistor

You can replace the BD679A with the 2N6039, 2N6039G, BD679, BD679AG, BD679G, BD681, BD681G, BD779, KSE802, KSE803, MJE802, MJE802G, MJE803 or MJE803G.

Lead-free Version

The BD679AG transistor is the lead-free version of the BD679A.
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