MJE802 Bipolar Transistor

Characteristics of MJE802 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of MJE802

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

MJE802 equivalent circuit

Complementary PNP transistor

The complementary PNP transistor to the MJE802 is the MJE702.

Replacement and Equivalent for MJE802 transistor

You can replace the MJE802 with the 2N6039, 2N6039G, BD679, BD679A, BD679AG, BD679G, BD681, BD681G, BD779, KSE802, KSE803, MJE802G, MJE803 or MJE803G.
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