MJE801G Bipolar Transistor

• Type: NPN
• Collector-Emitter Voltage, max: 60 V
• Collector-Base Voltage, max: 60 V
• Emitter-Base Voltage, max: 5 V
• Collector Current − Continuous, max: 4 A
• Collector Dissipation: 40 W
• DC Current Gain (h_fe): 750
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: TO-126

Here is an image showing the pin diagram of this transistor.The complementary PNP transistor to the MJE801G is the MJE701G.You can replace the MJE801G with the 2N6038, 2N6038G, 2N6039, 2N6039G, BD677, BD677A, BD677AG, BD677G, BD679, BD679A, BD679AG, BD679G, BD681, BD681G, BD777, BD779, KSE800, KSE801, KSE802, KSE803, MJE800, MJE800G, MJE801, MJE802, MJE802G, MJE803 or MJE803G.