MJE803G Bipolar Transistor

Characteristics of MJE803G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of MJE803G

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

MJE803G equivalent circuit

Complementary PNP transistor

The complementary PNP transistor to the MJE803G is the MJE703G.

Replacement and Equivalent for MJE803G transistor

You can replace the MJE803G with the 2N6039, 2N6039G, BD679, BD679A, BD679AG, BD679G, BD681, BD681G, BD779, KSE802, KSE803, MJE802, MJE802G or MJE803.
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