MJE800G Bipolar Transistor

Characteristics of MJE800G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of MJE800G

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

MJE800G equivalent circuit

Complementary PNP transistor

The complementary PNP transistor to the MJE800G is the MJE700G.

Replacement and Equivalent for MJE800G transistor

You can replace the MJE800G with the 2N6038, 2N6038G, 2N6039, 2N6039G, BD677, BD677A, BD677AG, BD677G, BD679, BD679A, BD679AG, BD679G, BD681, BD681G, BD777, BD779, KSE800, KSE801, KSE802, KSE803, MJE800, MJE801, MJE801G, MJE802, MJE802G, MJE803 or MJE803G.
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