BD679 Bipolar Transistor

Characteristics of BD679 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126
  • Electrically Similar to the Popular MJE802 transistor

Pinout of BD679

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

BD679 equivalent circuit

Complementary PNP transistor

The complementary PNP transistor to the BD679 is the BD680.

Replacement and Equivalent for BD679 transistor

You can replace the BD679 with the 2N6039, 2N6039G, BD679A, BD679AG, BD679G, BD681, BD681G, BD779, KSE802, KSE803, MJE802, MJE802G, MJE803 or MJE803G.

Lead-free Version

The BD679G transistor is the lead-free version of the BD679.
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