BD681 Bipolar Transistor

Characteristics of BD681 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of BD681

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

BD681 equivalent circuit

Complementary PNP transistor

The complementary PNP transistor to the BD681 is the BD682.

Replacement and Equivalent for BD681 transistor

You can replace the BD681 with the BD681G.

Lead-free Version

The BD681G transistor is the lead-free version of the BD681.
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