2SD985 Bipolar Transistor

Characteristics of 2SD985 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 150 V
  • Emitter-Base Voltage, max: 8 V
  • Collector Current − Continuous, max: 1.5 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 2000 to 30000
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SD985

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD985 transistor can have a current gain of 2000 to 30000. The gain of the 2SD985-K will be in the range from 8000 to 30000, for the 2SD985-L it will be in the range from 4000 to 10000, for the 2SD985-M it will be in the range from 2000 to 5000.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD985 might only be marked "D985".

Complementary PNP transistor

The complementary PNP transistor to the 2SD985 is the 2SB794.

Replacement and Equivalent for 2SD985 transistor

You can replace the 2SD985 with the 2SD1509, 2SD986, BD167, BD169, BD189, BD235, BD235G, BD237, BD237G, BD677, BD677A, BD677AG, BD677G, BD679, BD679A, BD679AG, BD679G, BD681, BD681G, BD777, BD779, KSB985, KSB986, KSE800, KSE801, KSE802, KSE803, MJE225, MJE242, MJE244, MJE270, MJE270G, MJE721, MJE722, MJE800, MJE800G, MJE801, MJE801G, MJE802, MJE802G, MJE803 or MJE803G.
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