KSB985 Bipolar Transistor

Characteristics of KSB985 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 150 V
  • Emitter-Base Voltage, max: 8 V
  • Collector Current − Continuous, max: 1.5 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 2000 to 30000
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126
  • Electrically Similar to the Popular 2SD985 transistor

Pinout of KSB985

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSB985 transistor can have a current gain of 2000 to 30000. The gain of the KSB985-O will be in the range from 4000 to 10000, for the KSB985-R it will be in the range from 2000 to 5000, for the KSB985-Y it will be in the range from 8000 to 30000.

Complementary PNP transistor

The complementary PNP transistor to the KSB985 is the KSB794.

Replacement and Equivalent for KSB985 transistor

You can replace the KSB985 with the 2SD1509, 2SD985, 2SD986, BD167, BD169, BD189, BD235, BD235G, BD237, BD237G, BD677, BD677A, BD677AG, BD677G, BD679, BD679A, BD679AG, BD679G, BD681, BD681G, BD777, BD779, KSB986, KSE800, KSE801, KSE802, KSE803, MJE225, MJE242, MJE244, MJE270, MJE270G, MJE721, MJE722, MJE800, MJE800G, MJE801, MJE801G, MJE802, MJE802G, MJE803 or MJE803G.
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