BD237G Bipolar Transistor

Characteristics of BD237G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 2 A
  • Collector Dissipation: 25 W
  • DC Current Gain (hfe): 40
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of BD237G

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BD237G is the BD238G.

SMD Version of BD237G transistor

The BCP56 (SOT-223), BCP56-10 (SOT-223), BCP56-16 (SOT-223), BCX56 (SOT-89), BCX56-10 (SOT-89) and BCX56-16 (SOT-89) is the SMD version of the BD237G transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for BD237G transistor

You can replace the BD237G with the 2N6039, 2N6039G, 2SD1509, 2SD1692, 2SD1692-K, 2SD1692-L, 2SD1692-M, 2SD1724, 2SD1724-Q, 2SD1724-R, 2SD1724-R, 2SD1724-S, 2SD1725, 2SD1725-Q, 2SD1725-R, 2SD1725-R, 2SD1725-S, BD179, BD179-10, BD179-6, BD179G, BD237, BD379, BD379-10, BD379-16, BD379-25, BD379-6, BD441, BD441G, BD679, BD679A, BD679AG, BD679G, BD681, BD681G, BD779, BD789, BD791, KSD1692, KSD1692-G, KSD1692-O, KSD1692-Y, KSE182, KSE802, KSE803, MJE182, MJE182G, MJE240, MJE241, MJE243, MJE243G, MJE270, MJE270G, MJE802, MJE802G, MJE803 or MJE803G.
If you find an error please send an email to mail@el-component.com