BD779 Bipolar Transistor

• Type: NPN
• Collector-Emitter Voltage, max: 80 V
• Collector-Base Voltage, max: 80 V
• Emitter-Base Voltage, max: 5 V
• Collector Current − Continuous, max: 4 A
• Collector Dissipation: 15 W
• DC Current Gain (h_fe): 750
• Transition Frequency, min: 20 MHz
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: TO-126

Here is an image showing the pin diagram of this transistor.The complementary PNP transistor to the BD779 is the BD780.You can replace the BD779 with the 2N6039, 2N6039G, BD679, BD679A, BD679AG, BD679G, BD681, BD681G, KSE802, KSE803, MJE802, MJE802G, MJE803 or MJE803G.