2SD1692-M Bipolar Transistor

Characteristics of 2SD1692-M Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 150 V
  • Emitter-Base Voltage, max: 8 V
  • Collector Current − Continuous, max: 3 A
  • Collector Dissipation: 15 W
  • DC Current Gain (hfe): 2000 to 5000
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SD1692-M

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1692-M transistor can have a current gain of 2000 to 5000. The gain of the 2SD1692 will be in the range from 2000 to 20000, for the 2SD1692-K it will be in the range from 8000 to 20000, for the 2SD1692-L it will be in the range from 4000 to 10000.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1692-M might only be marked "D1692-M".

Replacement and Equivalent for 2SD1692-M transistor

You can replace the 2SD1692-M with the BD681, BD681G, KSD1692, KSD1692-O or MJE244.
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