BD677G Bipolar Transistor

Characteristics of BD677G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126
  • The BD677G is the lead-free version of the BD677 transistor

Pinout of BD677G

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BD677G is the BD678G.

Replacement and Equivalent for BD677G transistor

You can replace the BD677G with the 2N6038, 2N6038G, 2N6039, 2N6039G, BD677, BD677A, BD677AG, BD679, BD679A, BD679AG, BD679G, BD681, BD681G, BD777, BD779, KSE800, KSE801, KSE802, KSE803, MJE800, MJE800G, MJE801, MJE801G, MJE802, MJE802G, MJE803 or MJE803G.
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