BD777 Bipolar Transistor

Characteristics of BD777 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 4 A
  • Collector Dissipation: 15 W
  • DC Current Gain (hfe): 750
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of BD777

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

BD777 equivalent circuit

Complementary PNP transistor

The complementary PNP transistor to the BD777 is the BD778.

Replacement and Equivalent for BD777 transistor

You can replace the BD777 with the 2N6038, 2N6038G, 2N6039, 2N6039G, BD677, BD677A, BD677AG, BD677G, BD679, BD679A, BD679AG, BD679G, BD681, BD681G, BD779, KSE800, KSE801, KSE802, KSE803, MJE800, MJE800G, MJE801, MJE801G, MJE802, MJE802G, MJE803 or MJE803G.
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