MJE803 Bipolar Transistor

Characteristics of MJE803 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of MJE803

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

MJE803 equivalent circuit

Complementary PNP transistor

The complementary PNP transistor to the MJE803 is the MJE703.

Replacement and Equivalent for MJE803 transistor

You can replace the MJE803 with the 2N6039, 2N6039G, BD679, BD679A, BD679AG, BD679G, BD681, BD681G, BD779, KSE802, KSE803, MJE802, MJE802G or MJE803G.
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