BD681G Bipolar Transistor

• Type: NPN
• Collector-Emitter Voltage, max: 100 V
• Collector-Base Voltage, max: 100 V
• Emitter-Base Voltage, max: 5 V
• Collector Current − Continuous, max: 4 A
• Collector Dissipation: 40 W
• DC Current Gain (h_fe): 750
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: TO-126
• The BD681G is the lead-free version of the BD681 transistor

Here is an image showing the pin diagram of this transistor.The complementary PNP transistor to the BD681G is the BD682G.You can replace the BD681G with the BD681.