MJE802G Bipolar Transistor

Characteristics of MJE802G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of MJE802G

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

MJE802G equivalent circuit

Complementary PNP transistor

The complementary PNP transistor to the MJE802G is the MJE702G.

Replacement and Equivalent for MJE802G transistor

You can replace the MJE802G with the 2N6039, 2N6039G, BD679, BD679A, BD679AG, BD679G, BD681, BD681G, BD779, KSE802, KSE803, MJE802, MJE803 or MJE803G.
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