MJE801 Bipolar Transistor

Characteristics of MJE801 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of MJE801

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

MJE801 equivalent circuit

Complementary PNP transistor

The complementary PNP transistor to the MJE801 is the MJE701.

Replacement and Equivalent for MJE801 transistor

You can replace the MJE801 with the 2N6038, 2N6038G, 2N6039, 2N6039G, BD677, BD677A, BD677AG, BD677G, BD679, BD679A, BD679AG, BD679G, BD681, BD681G, BD777, BD779, KSE800, KSE801, KSE802, KSE803, MJE800, MJE800G, MJE801G, MJE802, MJE802G, MJE803 or MJE803G.
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