BD675AG Bipolar Transistor
Characteristics of BD675AG Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 45 V
- Collector-Base Voltage, max: 45 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 4 A
- Collector Dissipation: 40 W
- DC Current Gain (hfe): 750
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-126
- The BD675AG is the lead-free version of the BD675A transistor
Pinout of BD675AG
Complementary PNP transistor
Replacement and Equivalent for BD675AG transistor
If you find an error please send an email to mail@el-component.com