MJE182 Bipolar Transistor

Characteristics of MJE182 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 3 A
  • Collector Dissipation: 12.5 W
  • DC Current Gain (hfe): 50 to 250
  • Transition Frequency, min: 50 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of MJE182

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the MJE182 is the MJE172.

SMD Version of MJE182 transistor

The BDP951 (SOT-223) and BDP953 (SOT-223) is the SMD version of the MJE182 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for MJE182 transistor

You can replace the MJE182 with the BD179, BD789, BD791, KSE182, MJE182G, MJE242 or MJE244.
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