BD789 Bipolar Transistor

Characteristics of BD789 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 4 A
  • Collector Dissipation: 15 W
  • DC Current Gain (hfe): 40 to 250
  • Transition Frequency, min: 40 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of BD789

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BD789 is the BD790.

SMD Version of BD789 transistor

The BDP951 (SOT-223) is the SMD version of the BD789 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for BD789 transistor

You can replace the BD789 with the BD791, MJE242 or MJE244.
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