2SD1725 Bipolar Transistor

Characteristics of 2SD1725 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 4 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 70 to 400
  • Transition Frequency, min: 180 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SD1725

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1725 transistor can have a current gain of 70 to 400. The gain of the 2SD1725-Q will be in the range from 70 to 140, for the 2SD1725-R it will be in the range from 100 to 200, for the 2SD1725-S it will be in the range from 140 to 280, for the 2SD1725-R it will be in the range from 200 to 400.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1725 might only be marked "D1725".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1725 is the 2SB1168.

SMD Version of 2SD1725 transistor

The BDP953 (SOT-223) and BDP955 (SOT-223) is the SMD version of the 2SD1725 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SD1725 transistor

You can replace the 2SD1725 with the MJE244.
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