MJE182G Bipolar Transistor

• Type: NPN
• Collector-Emitter Voltage, max: 80 V
• Collector-Base Voltage, max: 100 V
• Emitter-Base Voltage, max: 7 V
• Collector Current − Continuous, max: 3 A
• Collector Dissipation: 12.5 W
• DC Current Gain (h_fe): 50 to 250
• Transition Frequency, min: 50 MHz
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: TO-126

Here is an image showing the pin diagram of this transistor.The BDP951 (SOT-223) and BDP953 (SOT-223) is the SMD version of the MJE182G transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.You can replace the MJE182G with the BD179, BD789, BD791, KSE182, MJE182, MJE242 or MJE244.