BD130 Bipolar Transistor

Characteristics of BD130 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 100 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 20 to 70
  • Transition Frequency, min: 1 MHz
  • Operating and Storage Junction Temperature Range: -55 to +200 °C
  • Package: TO-3

Pinout of BD130

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for BD130 transistor

You can replace the BD130 with the 2N3055, 2N3055A, 2N3055AG, 2N3055G, 2N3055H, 2N5039, 2N5630, 2N5671, 2N5672, 2N5881, 2N5882, 2N5885, 2N5885G, 2N5886, 2N5886G, 2N6471, 2N6472, BD182, BD183, KD502, KD503, MJ14000, MJ14000G, MJ14002, MJ14002G, MJ15015, MJ15015G or NTE130.
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