2N5886 Bipolar Transistor

Characteristics of 2N5886 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 25 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 20 to 100
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of 2N5886

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the 2N5886 is the 2N5884.

Replacement and Equivalent for 2N5886 transistor

You can replace the 2N5886 with the 2N5671, 2N5672, 2N5886G, MJ14002 or MJ14002G.

Lead-free Version

The 2N5886G transistor is the lead-free version of the 2N5886.
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