2N5630 Bipolar Transistor

Characteristics of 2N5630 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 120 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 16 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 20 to 80
  • Transition Frequency, min: 1 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of 2N5630

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the 2N5630 is the 2N6030.

Replacement and Equivalent for 2N5630 transistor

You can replace the 2N5630 with the 2N5038, 2N5038G, 2N5039 or 2N5672.
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