2N5630 Bipolar Transistor
Characteristics of 2N5630 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 120 V
- Collector-Base Voltage, max: 120 V
- Emitter-Base Voltage, max: 7 V
- Collector Current − Continuous, max: 16 A
- Collector Dissipation: 200 W
- DC Current Gain (hfe): 20 to 80
- Transition Frequency, min: 1 MHz
- Operating and Storage Junction Temperature Range: -65 to +200 °C
- Package: TO-3
Pinout of 2N5630
Complementary PNP transistor
Replacement and Equivalent for 2N5630 transistor
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