2N6472 Bipolar Transistor

Characteristics of 2N6472 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 90 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 125 W
  • DC Current Gain (hfe): 20 to 150
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of 2N6472

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for 2N6472 transistor

You can replace the 2N6472 with the KD503.
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