2N5885G Bipolar Transistor

Characteristics of 2N5885G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 25 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 20 to 100
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3
  • The 2N5885G is the lead-free version of the 2N5885 transistor

Pinout of 2N5885G

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the 2N5885G is the 2N5883G.

Replacement and Equivalent for 2N5885G transistor

You can replace the 2N5885G with the 2N5671, 2N5672, 2N5885, 2N5886, 2N5886G, MJ14000, MJ14000G, MJ14002 or MJ14002G.
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