MJ14002 Bipolar Transistor

Characteristics of MJ14002 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 60 A
  • Collector Dissipation: 300 W
  • DC Current Gain (hfe): 15 to 100
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of MJ14002

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the MJ14002 is the MJ14003.

Replacement and Equivalent for MJ14002 transistor

You can replace the MJ14002 with the MJ14002G.

Lead-free Version

The MJ14002G transistor is the lead-free version of the MJ14002.
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