MJ15015G Bipolar Transistor
Characteristics of MJ15015G Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 120 V
- Collector-Base Voltage, max: 200 V
- Emitter-Base Voltage, max: 7 V
- Collector Current − Continuous, max: 15 A
- Collector Dissipation: 180 W
- DC Current Gain (hfe): 20 to 70
- Transition Frequency, min: 1 MHz
- Operating and Storage Junction Temperature Range: -65 to +200 °C
- Package: TO-3
- The MJ15015G is the lead-free version of the MJ15015 transistor
Pinout of MJ15015G
Complementary PNP transistor
Replacement and Equivalent for MJ15015G transistor
If you find an error please send an email to mail@el-component.com