NTE130 Bipolar Transistor

Characteristics of NTE130 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 115 W
  • DC Current Gain (hfe): 20 to 70
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of NTE130

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the NTE130 is the NTE219.

Replacement and Equivalent for NTE130 transistor

You can replace the NTE130 with the 2N3055, 2N3055A, 2N3055AG, 2N3055G, 2N3055H, 2N5039, 2N5630, 2N5671, 2N5672, 2N5881, 2N5882, 2N5885, 2N5885G, 2N5886, 2N5886G, 2N6471, 2N6472, BD130, BD182, BD183, KD502, KD503, MJ14000, MJ14000G, MJ14002, MJ14002G, MJ15015 or MJ15015G.
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