MJ14000G Bipolar Transistor

Characteristics of MJ14000G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 60 A
  • Collector Dissipation: 300 W
  • DC Current Gain (hfe): 15 to 100
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3
  • The MJ14000G is the lead-free version of the MJ14000 transistor

Pinout of MJ14000G

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the MJ14000G is the MJ14001G.

Replacement and Equivalent for MJ14000G transistor

You can replace the MJ14000G with the MJ14000, MJ14002 or MJ14002G.
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