2N3055H Bipolar Transistor

Characteristics of 2N3055H Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 115 W
  • DC Current Gain (hfe): 20 to 70
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of 2N3055H

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for 2N3055H transistor

You can replace the 2N3055H with the 2N3055, 2N3055A, 2N3055AG, 2N3055G, 2N5039, 2N5630, 2N5671, 2N5672, 2N5881, 2N5882, 2N5885, 2N5885G, 2N5886, 2N5886G, 2N6471, 2N6472, BD130, BD182, BD183, KD502, KD503, MJ14000, MJ14000G, MJ14002, MJ14002G, MJ15015, MJ15015G or NTE130.
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