2N6471 Bipolar Transistor

Characteristics of 2N6471 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 70 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 125 W
  • DC Current Gain (hfe): 20 to 150
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of 2N6471

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for 2N6471 transistor

You can replace the 2N6471 with the 2N6472, KD502 or KD503.
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