MJ14002G Bipolar Transistor

Characteristics of MJ14002G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 60 A
  • Collector Dissipation: 300 W
  • DC Current Gain (hfe): 15 to 100
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3
  • The MJ14002G is the lead-free version of the MJ14002 transistor

Pinout of MJ14002G

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the MJ14002G is the MJ14003G.

Replacement and Equivalent for MJ14002G transistor

You can replace the MJ14002G with the MJ14002.
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