2N3055G Bipolar Transistor

Characteristics of 2N3055G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 115 W
  • DC Current Gain (hfe): 20 to 70
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3
  • The 2N3055G is the lead-free version of the 2N3055 transistor

Pinout of 2N3055G

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the 2N3055G is the MJ2955G.

Replacement and Equivalent for 2N3055G transistor

You can replace the 2N3055G with the 2N3055, 2N3055A, 2N3055AG, 2N3055H, 2N5039, 2N5630, 2N5671, 2N5672, 2N5881, 2N5882, 2N5885, 2N5885G, 2N5886, 2N5886G, 2N6471, 2N6472, BD130, BD182, BD183, KD502, KD503, MJ14000, MJ14000G, MJ14002, MJ14002G, MJ15015, MJ15015G or NTE130.
If you find an error please send an email to mail@el-component.com