2N5672 Bipolar Transistor

Characteristics of 2N5672 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 120 V
  • Collector-Base Voltage, max: 150 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 30 A
  • Collector Dissipation: 140 W
  • DC Current Gain (hfe): 20 to 100
  • Transition Frequency, min: 40 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of 2N5672

Here is an image showing the pin diagram of this transistor.
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