2N5881 Bipolar Transistor

Characteristics of 2N5881 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 160 W
  • DC Current Gain (hfe): 20 to 100
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of 2N5881

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the 2N5881 is the 2N5879.

Replacement and Equivalent for 2N5881 transistor

You can replace the 2N5881 with the 2N5039, 2N5671, 2N5672, 2N5882, 2N5885, 2N5885G, 2N5886, 2N5886G, 2N6471, 2N6472, KD502, KD503, MJ14000, MJ14000G, MJ14002 or MJ14002G.
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