MJ2955G Bipolar Transistor

Characteristics of MJ2955G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 115 W
  • DC Current Gain (hfe): 20 to 70
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3
  • The MJ2955G is the lead-free version of the MJ2955 transistor

Pinout of MJ2955G

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the MJ2955G is the 2N3055G.

Replacement and Equivalent for MJ2955G transistor

You can replace the MJ2955G with the 2N5879, 2N5880, 2N5883, 2N5883G, 2N5884, 2N5884G, 2N6030, 2N6246, 2N6247, 2N6248, 2N6436, 2N6437, 2N6438, MJ14001, MJ14001G, MJ14003, MJ14003G, MJ15016, MJ15016G, MJ2955, MJ2955A or NTE219.
If you find an error please send an email to mail@el-component.com