BDX65A Bipolar Transistor

Characteristics of BDX65A Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 12 A
  • Collector Dissipation: 117 W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -55 to +200 °C
  • Package: TO-3

Pinout of BDX65A

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDX65A is the BDX64A.

Replacement and Equivalent for BDX65A transistor

You can replace the BDX65A with the BDX65B, BDX65C, BDX67A, BDX67B, BDX67C, BDX69A, BDX69B, BDX69C, MJ11014, MJ11014G, MJ11016, MJ11016G, MJ11030, MJ11030G, MJ11032, MJ11032G, MJ4034 or MJ4035.
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