MJ11030G Bipolar Transistor

Characteristics of MJ11030G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 90 V
  • Collector-Base Voltage, max: 90 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 50 A
  • Collector Dissipation: 300 W
  • DC Current Gain (hfe): 1000 to 18000
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3
  • The MJ11030G is the lead-free version of the MJ11030 transistor

Pinout of MJ11030G

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

MJ11030G equivalent circuit

Complementary PNP transistor

The complementary PNP transistor to the MJ11030G is the MJ11031G.

Replacement and Equivalent for MJ11030G transistor

You can replace the MJ11030G with the MJ11030, MJ11032 or MJ11032G.
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