MJ11016 Bipolar Transistor

Characteristics of MJ11016 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 120 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 30 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 1000
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of MJ11016

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

MJ11016 equivalent circuit

Complementary PNP transistor

The complementary PNP transistor to the MJ11016 is the MJ11015.

Replacement and Equivalent for MJ11016 transistor

You can replace the MJ11016 with the MJ11016G, MJ11032 or MJ11032G.

Lead-free Version

The MJ11016G transistor is the lead-free version of the MJ11016.
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