BDX65B Bipolar Transistor

Characteristics of BDX65B Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 12 A
  • Collector Dissipation: 117 W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -55 to +200 °C
  • Package: TO-3

Pinout of BDX65B

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDX65B is the BDX64B.

Replacement and Equivalent for BDX65B transistor

You can replace the BDX65B with the BDX65C, BDX67B, BDX67C, BDX69B, BDX69C, MJ11016, MJ11016G, MJ11032, MJ11032G or MJ4035.
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